Characterization of 6.5 kV SiC MOSFETs with and without an Integrated On-Chip Schottky Diode
Konferenz: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.05.2023-11.05.2023 in Nürnberg, Germany
doi:10.30420/566091118
Tagungsband: PCIM Europe 2023
Seiten: 7Sprache: EnglischTyp: PDF
Autoren:
Baker, Nick; Lemmon, Andy; Jimenez Cardenas, Sergio (University of Alabama, USA)
Inhalt:
In this paper we compare 6.5kV Silicon Carbide MOSFET chips with and without an integrated Schottky diode. We assess theperformance at 25deg C and 125deg C in a double pulse test, as well as providing IV curve and Third Quadrant characteristics at both temperatures. The chips are tested in a custom halfbridge module. We find significantly improved switching performance from the integrated Schottky diode chip when operated at elevated temperatures.