A Variable Gate Resistance SiC MOSFET Driver Network to Mitigate Overshoot and Parasitic Ringing

Konferenz: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.05.2023-11.05.2023 in Nürnberg, Germany

doi:10.30420/566091153

Tagungsband: PCIM Europe 2023

Seiten: 7Sprache: EnglischTyp: PDF

Autoren:
Choo, Vin Loong; Pfost, Martin (Chair of Energy Conversion, TU Dortmund University, Germany)

Inhalt:
Compared to silicon devices, wide-bandgap devices based on silicon carbide (SiC) are able to operate at higher voltages and currents. Additionally, higher switching frequencies and lower losses can be achieved, leading to high dv/dt and di/dt. This can lead to overshoots and parasitic ringing, increasing the switching losses which reduces the overall efficiency and increases electromagnetic interference. The proposed active gate driver network reduces overshoots and parasitic ringing while maintaining the advantage of a fast switching transient.