The Evolution of Commercial SiC FETs, from Planar Gates to Reliable Trench Technology and Towards Superjunction Devices

Inhalt:
Products from the latest generation of commercially available silicon carbide (SiC) FET technologies are investigated, using cutting edge analysis techniques such as scanning capacitance microscopy (SCM), transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS). We discuss the latest innovation and how technology has evolved to todays in some cases fourth generation SiC FETs, with a discussion on the merits of each variety. We review further advances necessary in processing techniques to achieve a true SiC superjunction device on a mass production scale.