Reduction of SiC-MOSFET Switching Oscillations during Double Pulse Measurements

Inhalt:
The double pulse measurement is a standard test method to analyze the dynamic behavior of power electronic devices like IGBTs, MOSFETs, and diodes. In this work, a double pulse measurement is modeled and simulated with SPICE to investigate the influence of the MOSFETs, the printed circuit board and the inductive load on the switching oscillations. The main parasitic elements are taken into account for an accurate simulation. The simulation results are validated by comparison with measurement results. The SPICE-simulation shows that the lead length from the printed circuit board to the inductive load influences the switching oscillation. The reason is a resonance of the lead’s inductance and the parasitic winding capacitance of the inductor. This fact can be used for a reduction of the oscillation.