Evaluation of Silicon Nitride as Moisture Barrier Layer for Enhanced Reliability of IGBT Modules During HV-H³TRB Test

Inhalt:
The robustness of power semiconductor modules in the harsh operating environment, especially in presence of moisture at high operating voltages is of crucial importance. Moisture can severely affect the module’s performance and so it is necessary to design devices that can stop the moisture permeation. In this paper, we present the application of silicon nitride as a moisture barrier layer over the busbars that were not covered by metal. The modules with the nitride layer showed promising results during HV-H³TRB test by passing the 1000 hours at 3600V and then later on also passed the residual blocking test.