Efficiency and EMC Comparison of Si MOSFET and GaN HEMT Based Full Bridge DC-DC Converter
Konferenz: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.05.2023-11.05.2023 in Nürnberg, Germany
doi:10.30420/566091334
Tagungsband: PCIM Europe 2023
Seiten: 9Sprache: EnglischTyp: PDF
Autoren:
Ekon, Ayawo Roger (Université Paris-Saclay, ENS Paris-Saclay, CNRS, SATIE, France & Synchrotron SOLEIL, France)
Petit, Mickael (Université Paris-Saclay, ENS Paris-Saclay, CNRS, SATIE, France & Le CNAM, France)
Costa, Francois (Université Paris-Saclay, ENS Paris-Saclay, CNRS, SATIE, France & Université Paris Est Créteil, INSPE, France)
Bouvet, Francois; Dupuy, Eric (Synchrotron SOLEIL, France)
Inhalt:
The fourth-generation corrector electromagnets of the SOLEIL synchrotron require compact switch mode power supplies (SMPS) with high dynamics in the transition phases, low residual output ripple of few ppm, good EMC performance and good efficiency. To achieve this, the study of a low-power bipolar DC-DC converter with a high switching frequency is in progress. A technological comparison between GaN HEMT and Si MOSFET based SMPS is proposed on the different criteria of the specifications.