Trading–off GaN FET Performance with Advanced Si MOSFETs

Inhalt:
Efficient integration is the new megatrend which is driving innovative solutions for E/E (Electrical and Electronic) power systems to continuously improve power density, miniaturization and cost enabling new markets and applications. This gives great momentum to technological advances boosting both the optimization of consolidated technologies and development of new processes with new materials. Wide bandgap (WBG) semiconductors, such as Gallium Nitride (GaN), allow for some specific performance improvements over the current standard silicon. However, the choice of the best technology is strictly application-driven, as a wide range of systems can be better addressed with Si MOSFETs.