Using the Influence of Internal Gate Resistance on Gate Current Peak as TSEP for GaN HEMTs
Konferenz: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.05.2023-11.05.2023 in Nürnberg, Germany
doi:10.30420/566091364
Tagungsband: PCIM Europe 2023
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Ladentin, Kevin; Lindemann, Andreas (Otto-von-Guericke-Universität Magdeburg, Germany)
Inhalt:
In this paper a temperature measurement method which is already used for Si-IGBTs is adapted to commercially available GaN HEMTs. This method is based on a temperature dependency of the internal gate resistance and its impact on the gate current peak during turn on transition.