Experimental Analysis of Short Circuit Robustness of GaN and SiC Cascode Devices
Konferenz: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.05.2023-11.05.2023 in Nürnberg, Germany
doi:10.30420/566091366
Tagungsband: PCIM Europe 2023
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Gunaydin, Yasin; Jahdi, Saeed; Yuan, Xibo; Shen, Chengjun; Hosseinzadelish, Mana; Yu, Renze (University of Bristol, Bristol, UK)
Alatise, Olayiwola; Ortiz Gonzalez, Jose (University of Warwick, Coventry, UK)
Inhalt:
The short circuit evaluation of the GaN and SiC cascode devices is characterized in this paper. The effects of three different parameters, gate resistors, DC-link voltages and temperature on the short circuit have been analyzed and discussed. Since the short circuit incapability of 650 V GaN cascode device, most of the parameters are decreased as much as possible. On the other hand, 650 V SiC power cascode device shows the highest short circuit current and energy in comparison with high rated GaN and SiC power cascode devices under various conditions.