Radiation Hardness of SiC Based Inverters Based on an EV Mission Profile

Inhalt:
Cosmic radiation (CR) ruggedness is one of the main design features of the SiC MOSFETs used in the EV inverters. Over its entire lifetime the EV inverter is exposed to cosmic radiation and prone to single-event-burnout failures. The rate of failure or CR FIT (failure in time) is a commonly agreed parameter that defines the radiation ruggedness of the SiC. CR FIT rate is also dependent on the mission profile that is particular to a certain inverter application. Experimental results combined with the application specific mission profile eases the design for a SiC technology optimized for the use in the real-life scenarios.