Current Sharing Issues of Paralleled SiC MOSFET

Inhalt:
For paralleling SiC MOSFET, there are many technical challenges including current imbalance, different thermal performance and over voltage. In this paper, theoretical analysis and mathematical calculation of different circuit parameters’ effect on current sharing of paralleled SiC MOSFET is presented. Simetrix simulation based on SPICE model is proposed to investigate the influence of different parameters on current sharing. Driver circuit design suggestions and gate resistance design method are provided. Based on the theoretical analysis, gate loop design method can improve the imbalance due to circuit and device parameters mismatch.