Impact of SBD Embedding into SiC MOSFETs on Dynamic Behavior at High Temperature

Inhalt:
We investigated the impact of integrating Schottky barrier diode (SBD) into silicon carbide MOSFET on their dynamic behavior at high temperatures. We measured the diode characteristics without interference from the switching device. Our findings indicate that SBD integration eliminates the temperature dependence of recovery characteristics and reduces diode recovery loss by 50% at a high temperature of 175deg C. Additionally, we clarified that the reverse recovery behavior affects the turn-on loss of the MOSFETs in the opposite arm of the inverter circuit, and SBD integration also reduces this turn-on loss by 40%.