The 1200 V CoolSiCTM M2 Easy C and .XT Interconnection Technology: Redefining Efficiency and Lifetime
Konferenz: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06.05.2025-08.05.2025 in Nürnberg, Germany
doi:10.30420/566541003
Tagungsband: PCIM Conference 2025
Seiten: 7Sprache: EnglischTyp: PDF
Autoren:
Puyadena, A.; Salmen, P.; Heer, D.; Korzenietz, A.; Groepper, F.
Inhalt:
The present evolution in power electronics design is driven by an increasing demand for compact, efficient, and durable solutions across various sectors, including electric vehicle (EV) DC fast chargers and on-board chargers (OBCs), as well as energy storage systems. This paper introduces a new generation of products that leverage advancements in the silicon carbide (SiC) MOSFET technology, innovative packaging, and improved interconnection techniques. The 1200 V CoolSiC(TM) M2 MOSFET .XT (extended lifetime) in Infineon’s newest Easy C series enables designs with more than 30% higher power density and more than 20 times longer lifetime.