Double Injection-Based Plasma SPICE Modelingin IGBTs with High Carrier Confinement

Inhalt:
Micro-pattern trench IGBT is the state-of-the-art technology for the new generation IGBT. This technol-ogy reduces losses significantly and offers a high level of controllability [1], but it also brings new challenges in physics-based compact modeling. The aim of this research is to present a new modeling approach for structures with high front-end carrier concentration. The new approach will considerably improve the modeling accuracy of the trade-off between the static and dynamic IGBT behaviors.