A Novel Test Method for Bipolar Degradation under Short Dead Times
Konferenz: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06.05.2025-08.05.2025 in Nürnberg, Germany
doi:10.30420/566541042
Tagungsband: PCIM Conference 2025
Seiten: 10Sprache: EnglischTyp: PDF
Autoren:
Herrmann, Clemens; He, Mengdi; Alaluss, Mohamed; Herold, Christian; Basler, Thomas
Inhalt:
A new test method is introduced that targets bipolar degradation of SiC MOSFET devices during short dead time phases. The approach offers strong scalability and acceleration, considers application-compliant conditions, and can cover current levels several times beyond the nominal current. Initial tests at short dead times are presented, analyzed, and compared with corresponding worst-case reference tests under DC conditions.