IGBT Module Demonstrator for High Frequency Applications with Integrated Driver and DoL Technology

Inhalt:
Modern power module design requires better thermal management and innovative gate-driving approaches to improve the lifetime and performance at high-frequency operations. The stray inductance associated with the current flowing path limits the increase in switching frequency. The distance and loop size held by the path of the driver circuit and the gate terminal of the MOSFET or IGBT is one of the challenging factors. This work integrates a PCB into a power module based on the DoL (Die-on lead frame) technology to achieve closer proximity between the gate contact and the driver components with better thermal stress management.