Performance Comparison between GaN-based Flying Capacitor and Active Neutral Point Clamped Three-Level Active Front End
Konferenz: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06.05.2025 - 08.05.2025 in Nürnberg, Germany
doi:10.30420/566541068
Tagungsband: PCIM Conference 2025
Seiten: Sprache: EnglischTyp: PDF
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Autoren:
Akbari, Reza; Di Cataldo, Angelo; Lieto, Alessandro Sebastiano; Testa, Antonio; Scelba, Giacomo; Aiello, Giuseppe; Gennaro, Franceso
Inhalt:
This work presents a comprehensive performance assessment of two three-phase and three-level converter prototypes based on gallium nitride technology, designed for active front-end applications in on-board battery chargers. The study compares a flying capacitor topology and an active neutral point clamped configuration, both implemented using the same demonstrator differing only in the power switching cell. Both topologies employ novel gallium nitride high-electron mobility transistors featuring 65 mOmega on-state resistance, 650 V drain-to-source blocking voltage and 80 A continuous drain current. The three-phase and three-level configurations are compared in terms of cost and performances carried out from the experimental tests conducted at typical active front end’s operating conditions, evidencing high efficiency and low total harmonic distortion for both demonstrators.