Pushing the Boundaries of High Current LV GaN Motor Drive with a Dual Side Parallel Approach

Inhalt:
This paper shows the design approach for a high-current inverter with 260 Arms using with 16 GaN HEMTs in parallel per switch targeting upto 96 V applications. The devices are distributed on the top and bottom side in an active area of 130 x 50 x 6mm. Particular attention was given to the gate driving and layout. Experimental waveforms and thermal measurements are presented to confirm the design approach. The implemented prototype achieves 260 Arms at 50 kHz while staying below 110deg C on a small heat-spreader.