Characterizations of a 1200 V / 150 A GaN Power Module

Inhalt:
The static and dynamic characterizations of a 1200 V / 150 A GaN-based flying-capacitor topology power module with four 650 V / 150 A GaN chips is presented in this work. Another ongoing work is dedicated to the implementation of these power modules into a high power isolated DC-DC converter for connecting electric vehicles to renewable energy dominated networks—V2X applications. Firstly, the concept of this GaN power module is depicted as an intelligent power module (IPM). Then, GaN chips are characterized within an automatic static test-bench. Finally, in order to demonstrate the functionality of the gate driver circuit and its performance, a dynamic characterization is performed.