Characterization of the Power Stage for a GaN-Embedded-based Traction Inverter

Inhalt:
This paper summarizes the characterization of a highly integrated power stage for a traction inverter based on PCB-embedded GaN FETs, compatible with Infineon’s Hybrid-PACK Drive power modules. The characterization covers both the gate driver board, primarily aimed at verifying its static and dynamic losses, and the power stage, where special care has been devoted to the loop inductance measurement. This measurement was performed using the classical double-pulse test and refined with the aid of a vector network analyzer used to determine the actual stray inductance between transistors and the DC-link due to the PCB. Both boards have been analyzed from a thermal point of view.