New 3.3 kV HV-IGBT Module for High-Speed-Switching
Konferenz: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06.05.2025 - 08.05.2025 in Nürnberg, Germany
doi:10.30420/566541103
Tagungsband: PCIM Conference 2025
Seiten: Sprache: EnglischTyp: PDF
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Autoren:
Saito, Shuhei; Tokumaru, Shogo; Hironaka, Yoichi; Soltau, Nils; Tolstopyatov, Victor; Hatori, Kenji
Inhalt:
Power modules for traction applications require lower power loss and higher reliability. To satisfy these needs, we have developed the 3.3 kV/1500 A XB-series High Voltage Insulated Gate Bipolar Transistor (HV-IGBT) module especially for applications with high switching frequencies. The total switching loss of the developed module can be reduced by over 15.4 % compared to the conventional 3.3 kV R-series module by optimizing the gate design. The 3.3 kV/1500 A XB-series module also provides higher ro-bustness. Reverse Bias Safe Operating Area (RBSOA) capability in terms of maximum current, is im-proved by 48.7% compared to the conventional 3.3 kV R-series module. To mitigate current crowding during turn-off switching and to relax the electric field at the edge termination, the new XB-series adopts the LNFLR (Linearly-narrowed Field Limiting Ring) design. Furthermore, the XB-series ensures a high robustness by larger Reverse Recovery Safe Operating Area (RRSOA) and suppressing current snap-off during recovery Regarding the structure of the module, the new XB-series improved the thermal cycling lifetime by new solder alloy applied for terminals.