900 A 1200 V ED Module with New Micropattern Trench IGBT Featuring Local Carrier Confinement Control

Inhalt:
In this paper, the new SwissSEM 900 A, 1200 V ED-type module featuring a micropattern IGBT chipset with state-of-the-art current density is introduced. The new module offers almost 400 mV reduction in VCE,sat at similar turn-off losses compared to the previous generation. The concept of local carrier confinement control for micropattern trench IGBTs (LCT) is introduced, and the benefits are shown experimentally. The auxiliary diode is optimized and improved by 250 mV in VF at the same recovery losses. Additionally, both the diode and IGBT are extremely rugged and show excellent switching softness.