High Power Density 2300V X2 IGBT module with 7th Technology

Inhalt:
This paper presents a newly developed 2300V IGBT module by the X2 package for renewable application. Based on the 7th generation fine trench IGBT technology, the on state voltage drop and the turn off energy loss were improved. The IGBT leakage current has been reduced by optimized buffer layer structure and ensures a short period of 175deg C junction temperature capability. The switch behavior and Safe Operating Area at -40deg C to 175deg C were introduced, and the loss power and operating junction temperature were evaluated compared with the 1700V H1 module.