Size Up Challenge of β-Ga2O3 Crystal Growth with Cold Container Called OCCC Method

Inhalt:
The Baliga figure of merit for β-Ga2O3 is much higher than SiC, making it a promising power semiconductor. However, high costs and defect density, mainly due to the use of expensive precious metal crucibles, limit its development. We report on large-size bulk crystal growth using the Oxide Crystal growth from Cold Crucible (OCCC) method, which eliminates the need for metal crucibles. Growth was achieved with a basket size of 100-150mm under normal air atmosphere. Though it become partly poly crystal method produced large crystals of around 70mm diameter, showing the potential for large single-crystal growth.