Optimised MOSFETs Design for EMC Performance

Konferenz: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06.05.2025 - 08.05.2025 in Nürnberg, Germany

doi:10.30420/566541135

Tagungsband: PCIM Conference 2025

Seiten: Sprache: EnglischTyp: PDF

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Autoren:
Ould-Ahmed, Sami; Stubbs, Ian

Inhalt:
The damping factor is a parameter used in MOSFET silicon design that directly relates to the ringing produced by MOSFETs fast switching transitions. This paper investigates the impact the damping factor has on EMC (electro-magnetic compatibility) per-formance. The paper highlights the three main phases covering the full design cycle: the study, simula-tion and lab measurement. Correlation of the results between the study and simulation will be validated through lab measurement. Waveforms showing damping and ringing of a MOSFET switching transition are obtained from double pulse test, and EMC performance evaluation is obtained from DC/DC and BLDC test applications. The aim is to identify the damping factor that achieves optimum MOSFET design for best EMC performance.