Comparison of Short-Circuit Detection and Protection Methods for Silicon Carbide MOSFETs in EV Applications

Inhalt:
SiC MOSFETs are becoming increasingly common in high-voltage electric vehicle systems, where faults can lead to DC-link short circuits and thermal hazards. To facilitate a quick disconnection from the HV battery and improve protection against thermal risks, this paper examines and assesses three short-circuit detection strategies: shunt-based detection, desaturation detection, and Hall-effect sensor detection. Measurement results are presented to compare the different methods in terms of their response time and cost. The findings highlight the advantages and drawbacks of each approach, providing valuable insights for better fault management in HV EV systems.