Comprehensive electric and thermal evaluation of SiC high-power discrete packages for next generation power supplies

Inhalt:
In modern power supplies, the use of SiC MOSFETs offers numerous advantages, including faster switching speeds and higher operating temperatures. However, to extract the largest benefit from discrete SiC MOSFETs, power electronics designers require a new understanding of the operating char-acteristics and their impact on power converter design. This article performs a quantitative and comprehensive electric and thermal evaluation of some of the most popular SiC MOSFET discrete packages, yielding that top-side-cooled devices offer a three-times lower parasitic loop inductance compared to through-hole and bottom-side-cooled devices, while offering an excellent thermal performance.