Investigation of the Degradation of 1200V SiC-MOSFETs Stressed by Different Γ Radiation Dose
Konferenz: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06.05.2025-08.05.2025 in Nürnberg, Germany
doi:10.30420/566541199
Tagungsband: PCIM Conference 2025
Seiten: 9Sprache: EnglischTyp: PDF
Autoren:
Rasch, Martin; Brandt, Soenke; Busch, Lucas; Wehrsted, Martin; Mueller, Alexander; Hoffmann, Klaus F.
Inhalt:
This paper presents the degradation of 1200 V Siliconcarbide (SiC) MOSFETs in regard to the influence of different γ radiation doses (γ-radiation). The impacts of four distinct γ-radiation doses (300 Gy, 200Gy, 100 Gy and 50 Gy) were examined. The analysis was conducted using four different MOSFETs from several manufacturers, all of them in the TO263-7 package. They belong to the same voltage class with similar on-state resistance but varying technologies. The primary indicators for degradation analysed in this study are the threshold VGS(th) and the breakdown voltage VDSS(BR).