Investigation of a Single-Gate GaN HEMT as Bidirectional Switch in a Low Voltage Multilevel Topology

Inhalt:
This work utilizes one conventional AlGaN/GaN HEMT with one gate as bidirectional switch in a three-level T-type converter topology operating at up to 48 V. The focus of this work is the investigation of the limits of AlGaN/GaN HEMTs in this operational region. An experimental setup with a Z-diode based driving circuit verifies the bidirectional switching capabilities of conventional single-gate AlGaN/GaN HEMTs and shows that their absence of the intrinsic body diode can be considered as an additional degree of freedom and not as a drawback.