A Novel Fully Compatible Gate Driver Design Methodology for Both E-mode SGT and GIT GaN HEMTs

Inhalt:
Although Schottky-Gate-Transistor (SGT) and Gate-Injection-Transistor (GIT) are two quite similar Enhancement-mode (E-mode) GaN devices, but considerations of their gate driver designs are quite dif-ferent. Nowadays, engineers always design two different gate drivers for SGT and GIT GaN HEMTs, which makes higher complexity, worse compatibility, and even higher system cost. This paper proposes a novel compatible gate driver design methodology for both E-mode SGT and GIT GaN HEMTs, which remarkably simplifies the design with a fully BOM-to-BOM compatible gate driver. By applying the pro-posed design methodology, a fully compatible gate driver is implemented and verified on a 150W CrM PFC and a 250W AC/DC PSU prototypes.