New 1200V SiC MOSFET with improved both Figure of Merits and Short-Circuit Capability

Inhalt:
This paper presents the new generation of 1200V silicon carbide (SiC) MOSFETs (e SiC, M2) employing a novel device technology that significantly decouples the trade-off between figure of merits (FOMs) and short-circuit withstand time (SCWT). Compared to the previous generation, the new 1200V SiC MOSFETs exhibit a 20% reduction in on-resistance (Rsp), a 15% improvement in SCWT, and a 45% reduction in switching losses. Furthermore, a comparison of the key characteristics including short-circuit ruggedness and switching performance with planar and trench 1200V SiC MOSFETs is presented.