New High-Performance XHP(TM) 2 Module with 2.3 kV Cool- SiC(TM) MOSFET for a Variety of Demanding Applications

Inhalt:
Currently, the trend for higher power density in medium power applications, especially for renewables, is a DC-link voltage increase to 1500 V. This results in the need for power devices with a blocking voltage of 2300 V. Additionally, these power devices should have lower switching and conduction losses compared to currently available chip technologies. To address this need, Infineon introduces the 2.3 kV CoolSiC(TM) MOSFET into the XHP(TM) 2. This paper presents the considerations regarding the package to gain high usability of this new device technology. Furthermore, an overview of the main electrical parameters is given. Besides this topic, the possible power output is determined via a PLECS simulation. These results are verified by a converter test.