Qualitative Study on Laser Backside Ohmic Contact Formation of a SiC-Ni Interface

Inhalt:
The text discusses Ohmic Contact Formation in semiconductor devices, focusing on its challenges and rapid thermal processing use for thick SiC substrates. The study investigated the effect of various laser parameters on creating NixSiy layers on 4H-SiC wafers using two diode-pumped solid-state laser sources with different pulse durations and beam shapes. The findings reveal the high tolerance of electrical performance to high laser fluencies, a correlation between laser energy density and NixSiy layer thickness, and the impact of pulse overlap on the formation of carbon-rich layers at the SiC-NixSiy interface.