Realizing the Potential of Rapidly Evolving Semiconductor Devices with the State-of-the-Art Magnetic

Inhalt:
The rapid advancement of semiconductor technology has led to more powerful, energy-efficient, and versatile devices. Wide bandgap (WBG) devices such as silicon carbide (SiC) and gallium nitride (GaN) offer higher switching speeds, broader frequency ranges, elevated temperature operation, and greater voltage handling capabilities. However, fully utilizing these benefits in high-power conversion systems is often constrained by the limitations of high-power, high-frequency magnetic components. This paper explores design strategies for advanced magnetic components that enable the effective integration of SiC and GaN devices, ensuring optimal performance in high-frequency, high-power applications