Experimental Comparison of Radiated EMI in Si MOSFETs and WBG GaN for Low Voltage Motor Drives

Konferenz: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06.05.2025 - 08.05.2025 in Nürnberg, Germany

doi:10.30420/566541309

Tagungsband: PCIM Conference 2025

Seiten: Sprache: EnglischTyp: PDF

Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt

Autoren:
Burrows, Kieran; Pickert, Volker; Incurvati, Maurizio; Ivic, Nikola; Cannone, Marco; Odahano, Shafiq; Mecrow, Barrie; Deng, Xu

Inhalt:
This paper compares the radiated EMI of Si MOSFET and GaN HEMT-based low voltage (LV) batterypowered VSIs. Key differences between the technologies such as slew rate, reverse recovery (Qrr), switching frequency, and parasitics are analysed to investigate variances in emission spectra. Bench testing extracts switching events for varying slew rates. Models for Radiated EMI are produced from these extracted waveforms. Practical measurements occur in a semi-anechoic chamber under various operational conditions. The results provide insights into emission origins and device behaviour, highlighting the differences between GaN and Si technologies for switching up to 150kHz.