Partial Turn-On in SiC MOSFETs: Experimental Analysis on Switching Dynamics and Converter Efficiency

Inhalt:
This paper presents the experimental analysis on Partial Turn-On (PTO) of fast-switching Silicon Carbide (SiC) MOSFETs and offers guidelines to minimize the risks due to crosstalk. While prior studies have primarily examined gate voltage transients, their direct impact on system performance has been underexplored. This study investigates the impact of PTO events on the device switching behavior, thermal performance and system efficiency as a function of circuit design parameters such as gate bias voltage, external gate-source capacitance, gate resistance, and Miller clamp (MC). This paper details practical insights on optimizing the gate driver circuit for improved device efficiency in industrial converter design.