Socket Based Test Bench for Dynamic Characterization of SiC MOSFET Bare Dice

Inhalt:
This paper describes the development of a double-pulse test bench for SiC MOSFET bare dice. This setup employs a customized socket for bare die test up to 90 A, 800 V, and temperatures from 15deg C to 150deg C. The proposed setup measures dynamic parameters in both double-pulse test in first quadrant and reverse recovery in third quadrant. For reverse recovery measurements, this work seeks to follow the JEDEC JEP201 Guidelines. Moreover, the power loop and socket stray inductances are calculated from double-pulse and reverse recovery waveforms. The aim of this test bench is to gather information about the power switching behavior of SiC MOSFET bare dice to contribute in the design and development of power modules. Finally, this work reports the identified test setup advantages and limitations.