Modular Gate Driver for Parallel Connection of Full-SiC 3.3kV MOSFETs

Inhalt:
This paper presents a modular gate driver architecture designed for the parallel connection of 3.3kV SiC MOSFET modules. The proposed architecture consists of a core driver board common to all modules and modular gate driving boards connected to each module. This design ensures symmetrical gate signals, which are crucial for balanced current sharing among the modules. The modular approach allows for scalability and adaptability in high-power applications. Experimental validation using Double Pulse Test (DPT) setups demonstrates the effectiveness of the design, showing excellent symmetry in gate signals and proper current balancing across different configurations and semiconductor types, including Si-based IGBTs and SiC-based MOSFETs. The results confirm the viability of the modular gate driver for high-power industrial applications.