Evaluation of Novel High-Bandwidth Current Sensors for High- Current SiC-Applications

Inhalt:
High bandwidth current sensors are needed to capture the fast switching transients of modern widebandgap semiconductor switches made from GaN and SiC. This work evaluates the usage of novel current sensors such as the M-Shunt and the second-generation Infinity Sensor for their ability to accurately resolve switching transients in the range of nanoseconds in high-current applications. Important metrics include: high bandwidth, low insertion inductance, small size and DC-capability. Measurement results are compared to established current sensors (Rogowski coil and coaxial shunt). Double pulse tests in an NPC inverter application were performed to test the sensors up to currents of 400 A.