Gate Drive and PCB Layout Design Considerations for Improving Current Sharing of Three SiC MOSFETs

Inhalt:
To support high-power and high current applications, it is necessary to utilize multiple discrete SiC MOSFETs in parallel. The current sharing among these parallel switches and reliable operation are of great concern. This work has studied the effect of PCB layout, gate drive circuit and other key parameters of the SiC MOSFETs on the current sharing of three devices through simulations and experiments. The results show that, compared with the conventional PCB layout, with a proper gate drive circuit and the proposed PCB layout design, the current sharing of three devices can be improved dramatically. The power loss and the thermal performance can be improved as well.