Next Generation SiC Technology Targeting Long Distance Driving

Inhalt:
This paper examines key characteristics of next-generation SiC MOSFETs that enable EV inverters to support long-distance driving while minimizing power dissipation. It investigates the sizing and performance of next-generation 1200 V CoolSiC(TM) technology in a stereotypical 800 V powertrain based on torque-speed maps and driving cycles. The low on-state resistance times area Rds,onA, as well as the 200 °C junction temperature capability of modern trench-gate SiC MOSFETs, minimize the required SiC area of the inverter as well as conduction losses. The low switching losses realized by the fast switching capability of the power devices increase drive cycle efficiency and range thus reducing system-level costs.