Accurate Power MOSFET Modeling With Off-the-shelf Instruments

Inhalt:
The device models provided by manufacturers, which circuit designers inevitably rely on, may not agree well with the characteristics of the actual device at hand due to imperfections in their characterization or variations in device parameters. To address the issue, this paper proposes a designer-side modeling methodology based on the measurements of switching waveforms. The proposed methodology can be performed using only off-the-shelf laboratory equipment instead of semiconductor device analyzers. Through experiments using commercial SiC power MOSFET, a device model obtained by the proposed methodology achieves similar or higher accuracy than existing models across a wide range of operating conditions. The Garber data and model parameter extraction programs are available in a GitHub repository.