Versatile Compact Model for SiC Power MOSFET Body-Diode Reverse-Recovery

Inhalt:
This work presents a compact modeling approach to describe the dynamic behavior of the body diode in SiC power MOSFETs. An analysis of the physical mechanism of the transient reverse-recovery of the body-diode is investigated by means of TCAD simulations, which serve as basis to derive the equations of the proposed compact model. Model parameters are extracted from double pulse measurements of a commercially available SiC power MOSFET at different operating conditions. The simulation result shows that the proposed model can accurately describe the reverse-recovery charge, peak-current and the snap-back dynamics