Hybrid Switched Capacitor Converter with GaN Devices

Inhalt:
Optimizing power delivery in data centers is crucial for meeting the growing demands of high-performance computing applications, including artificial intelligence (AI). The 48 V power distribution architecture has become a widely adopted solution, leveraging the Intermediate Bus Architecture (IBA). Within this framework, Intermediate Bus Converters (IBCs) employ a variety of topologies, with Hybrid Switched Capacitor (HSC) converters standing out for their ability to achieve high power density and efficiency. Gallium Nitride (GaN) discrete devices are emerging as a strong alternative to traditional silicon (Si) components, particularly in hard-switching topologies. However, their advantages become less pronounced in resonant transformer-based converters, where transformer losses dominate [1]. This distinction is especially relevant in Zero-Voltage Switching (ZVS) converters, as Si devices increasingly face performance limitations in series resonant tank-based designs operating as DCX converters at high frequencies. These limitations pose challenges for achieving the high-density requirements of IBCs used in data-intensive applications. To address this, a novel model for HSC converters is introduced in this paper, demonstrating the strategic advantages of GaN in 48 V IBC systems. Additionally, experimental results from a 1.2 kW 5:1 HSC utilizing GaN technology validate the effectiveness and practicality of this approach.