A Current-Source Active Gate Driver for dvDS /dt Control an dVoltage Overshoot Reduction for SiC MOSFETs

Inhalt:
Active gate drivers (AGDs) are developed to optimize the performance of wide-bandgap power transistors. Parasitic effects can be handled by providing a precise and adaptive control of the gate current and therefore of their switching behavior. This work presents a digitally controlled current-source AGD designed for 1.2 kV SiC MOSFETs, aiming to control voltage overshoot while reducing switching losses. For its intended application in a traction inverter, an optimal turn-off current pattern is proposed. To validate its functionality, double-pulse test (DPT) measurements are carried out for various current profiles and a comparison with conventional gate drivers is discussed. The results demonstrate a turn-off energy reduction up to 48% compared to a conventional two-level voltage-source gate driver while retaining the same boundary conditions of dv DS /dt and voltage overshoot for a motor inverter application.