Impact of Gate Resistor Configuration when Paralleling Discrete WBG Devices

Inhalt:
To satisfy the increasing current requirements in power electronic applications, paralleling SiC MOSFETs is becoming more and more prevalent. However, driving paralleled devices is more complex than driving a single device, as there might be additional issues like oscillations and switching-loss imbalance. In this work, the switching behaviors of paralleled discrete devices are experimentally evaluated with different gate resistor configurations. The measurement results show how different gate resistor configurations influence the switching-loss imbalance as well as the oscillations during the switching transient.