A Novel Predictive Dead Time Control Method for High-Voltage Applications with SiC/GaN Devices

Konferenz: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06.05.2025 - 08.05.2025 in Nürnberg, Germany

doi:10.30420/566541415

Tagungsband: PCIM Conference 2025

Seiten: Sprache: EnglischTyp: PDF

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Autoren:
Zhao, Hongming; Damodar, Abhijith; Joos, Joachim; de Smedt, Valentijn

Inhalt:
This paper presents a novel closed-loop control scheme for optimizing dead time in power converters using SiC MOSFETs or GaN devices. Achieving optimal dead time across varying operating conditions is challenging. Current state-of-art solutions often require costly high-voltage (HV) components, complicating the system. The proposed method adjusts dead time based on common source inductance voltage (VLs ) and gate-source voltage (Vgs). Experimental results achieve dead times below 100 ns and demonstrate an 8.7% relative loss savings using the proposed method compared with a fixed 1 mus dead time in a 48V-12V synchronous converter at 10 kHz with 1 Ω resistor load.