Plasma Shaping in Silicon Diodes by Cathode-Side Lifetime Recovery
Konferenz: PCIM Asia Shanghai Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
24.09.2025-26.09.2025 in Shanghai, China
doi:10.30420/566583011
Tagungsband: PCIM Asia Shanghai Conference 2025
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Schneider, Nick; Díaz, Paula Reigosa; Stark, Roger; Stecconi, Tommaso; Li, Coris; Liang, Leon; Knoll, Lars
Inhalt:
A novel technique to tailor the carrier lifetime in silicon diodes by combining electron irradiation and hydrogen implantation is presented. The electron defects are locally passivated by carefully tuning the electron and hydrogen doses and the annealing conditions. Measurements of the fabricated devices and supporting device simulations are shown. The devices are compared with conventional diodes and the benefits of the cathode-side defect healing method are discussed.