Benefits of EDT3 750V Technology in Automotive Inverter Applications

Inhalt:
The trend of manufacturing cost-optimized hybrid and battery electric vehicles continues to support the design in of automotive qualified IGBTs and diodes. Infineon’s EDT3 750V technology supports this trend by allowing 185deg C operation, reduced switching losses, and superior VCE,sat compared to its predecessor, the 175deg C capable EDT2 technology. Considering the loss improvements and higher allowed junction temperature, simulations show a 37 % chip-size shrink potential of EDT3 over EDT2 IGBTs. To investigate the system-level benefits of EDT3, the drive cycle efficiency between EDT2 and EDT3 is compared. As shown, in the China Light-Duty Vehicle and Artemis Highway drive cycle EDT3 delivers a 7.6deg C and 18oC average Tvj reduction respectively. Moreover, to support high load operational points considered in various driving cycles, EDT3 has passed extended qualification tests as well as long-term switching tests. Furthermore, the (RB)SOA limits have been increased in comparison with EDT2 to allow for improved system designs. Finally, the chip shrink potential together with the robust qualification makes EDT3 an attractive candidate for optimized cost-performance system solutions.