The Impact of Gate Driver Loop Output Capability and Stray Parameters on Switching Performance
Konferenz: PCIM Asia Shanghai Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
24.09.2025-26.09.2025 in Shanghai, China
doi:10.30420/566583013
Tagungsband: PCIM Asia Shanghai Conference 2025
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Jie, Dong
Inhalt:
Each power switches needs one driver circuit, which is necessary but easy to ignore. Gate driver circuit has very important impact on power devices switching process, and two parameters are analyzed in this paper, driver circuit’s output capability and stray parameters. SiC MOSFET turn off process is shown as a basic and the factor and impact of capability and stray parameters are followed. Theoretical analysis and simulation results are executed to verify the two points. Gate driver loop design tips are listed to give some suggestions.

